| PART |
Description |
Maker |
| GLT6100L08LL-55TC GLT6100L08LL-70TC GLT6100L08LL-8 |
55ns; Ultra low power 64K x 16 CMOS SRAM
70ns; Ultra low power 64K x 16 CMOS SRAM
85ns; Ultra low power 64K x 16 CMOS SRAM
100ns; Ultra low power 64K x 16 CMOS SRAM
|
G-LINK Technology
|
| DSK6F1016U4C |
64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
SAMSUNG
|
| N01L63W2AB25I N01L63W2AB25IT N01L63W2AT5I N01L63W2 |
1Mb Ultra-Low Power Asynchronous CMOS SRAM 64K ? 16 bit
1Mb Ultra-Low Power Asynchronous CMOS SRAM 64K × 16 bit
|
ON Semiconductor
|
| KM68512A |
64Kx8 bit Low Power CMOS Static RAM(64K x 8位低功耗CMOS 静RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| IDT7187 IDT7187L IDT7187L25DB IDT7187L25L22B IDT71 |
CMOS STATIC RAM 64K (64K x 1-BIT) 64K X 1 STANDARD SRAM, 25 ns, CDIP22
|
Integrated Device Technology, Inc.
IDT[Integrated Device Technology]
|
| V53C464A V53C464J V53C464P V53C464Z |
High Performance / Low Power 64K x 4-Bit Fast Page Mode CMOS DRAM
|
Vitelic
|
| V62C2161024LL-55T V62C2161024LL-85T V62C2161024L V |
64K X 16 STANDARD SRAM, 100 ns, PDSO44
Ultra Low Power 64K x 16 CMOS SRAM 超低功4K的16 CMOS SRAM
|
MOSEL-VITELIC
Mosel Vitelic Corp
Mosel Vitelic, Corp.
MOSEL[Mosel Vitelic, Corp]
MOSEL[Mosel Vitelic Corp]
|
| BS616LV1013 BS616LV1013EIP70 BS616LV1013AC BS616LV |
Very Low Power/Voltage CMOS SRAM 64K X 16 bit 非常低功电压CMOS SRAM4K的16
Asynchronous 1M(64Kx16) bits Static RAM
|
Brilliance Semiconducto...
BRILLIANCE SEMICONDUCTOR, Inc.
BSI[Brilliance Semiconductor]
|
| P80C51 P80C51FA-4A P80C51FA-4B P80C51FA-4N P80C51F |
8-bit CMOS (low voltage, low power and high speed) microcontroller families
80C51 8-bit microcontroller family 8K.64K/256.1K OTP/ROM/ROMless low voltage 2.7V.5.5V low power high speed 33 MHz
80C51 8-bit microcontroller family 8K.64K/256.1K OTP/ROM/ROMless, low voltage 2.7V.5.5V, low power, high speed 33 MHz
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| CAT28LV64GI-20T CAT28LV64GI-15T CAT28LV64GA-20T CA |
DC-DC Converter, 2Watt, Input VDC: 5, Output VDC: 15, Max Output Current(A): 0.133, Package: SIP4, Isolation(VDC): 1000, Operating Temp. -40C to 85C, Low Ripple & Noise, High Efficiency up to 85%, Low Profile Plastic Case, Single Output
64K-Bit CMOS PARALLEL EEPROM
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一2 KB的EEPROM的国256位每字举办的串行CMOS
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国56位每字举办的串行CMOS
8K X 8 EEPROM 3V, 200 ns, PDIP28
64K-Bit CMOS PARALLEL EEPROM
|
http://
EEPROM
Abracon, Corp.
Coilcraft, Inc.
Vishay Intertechnology, Inc.
Vicor, Corp.
Catalyst Semiconductor
|
| KM64258E |
64K x 4 Bit(with OE)High-Speed CMOS Static RAM(64K x 4 OE)高速CMOS 静RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
